Influence of lattice mismatch on properties of InxGa1−xAs1−yPy layers epitaxially grown on InP substrates

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Abstract
Minority carrier (electron) diffusion length, density of electron traps and surface morphology in InxGa1−xAs1−yPy LPE layers grown on InP substrates have been investigated as a function of layer/substrate lattice mismatch. Two kinds of electron traps at Ec−0.60 and 0.67 eV are detected by DLTS measurement in undoped n‐type layers (x = 0.77,y = 0.65). Their density is very sensitive to the amount of lattice mismatch. On the contrary, the electron diffusion length in p‐type layers (x = 0.84,y = 0.63 at the lattice match condition) with the hole density ranging from 1 to 5×1017 cm−3 is almost independent of the amount of lattice mismatch at least within ±0.4 %. This result is explained in terms of dominant direct recombination process.