Growth and mosaic model of GaN grown directly on 6H–SiC(0001) by direct current plasma assisted molecular beam epitaxy
- 1 August 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 192 (1-2) , 28-32
- https://doi.org/10.1016/s0022-0248(98)00418-7
Abstract
No abstract availableKeywords
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