Is electronic spin angular momentum conserved in gas-surface interactions? F and F+ with Si(100)
- 1 June 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 171 (3) , 654-674
- https://doi.org/10.1016/0039-6028(86)91066-6
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- Self-consistent treatment of screening and Coulomb scattering in silicon inversion layers at low temperaturesSolid-State Electronics, 1985
- Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactionsVacuum, 1984
- Spatially resolved optical spectroscopy of plasma etching systemsVacuum, 1984
- A SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardmentSurface Science, 1982
- The reaction of fluorine atoms with siliconJournal of Applied Physics, 1981
- Optical emission from low-energy gas-phase collisionsSurface Science, 1979
- Electron impact induced light emission from CF4, CF3H, CF3Cl, CF2Cl2 and CFCl3Chemical Physics, 1978
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977
- De-excitation processes near the surface of ion bombarded SiO2 and SiSurface Science, 1976