Characteristics of Metal/PZT/p—Si MIS Capacitors
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Yttrium oxide based metal-insulator-semiconductor structures on siliconThin Solid Films, 1989
- Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMsProceedings of the IEEE, 1989
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Charge storage characteristics of MIS structures employing dual-insulator composites of HfO2–SiO2 and SrTiO3–SiO2Applied Physics Letters, 1973