Three-level charge pumping study of radiation-induced defects at SiSiO2 interface in submicrometer MOS transistors
- 1 July 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 187, 211-215
- https://doi.org/10.1016/0022-3093(95)00140-9
Abstract
No abstract availableKeywords
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