Analysis and Design of High-Power Rectifiers
- 1 January 1982
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Measurement and analysis of carrier distribution and lifetime in fast switching power rectifiersIEEE Transactions on Electron Devices, 1980
- Investigation of the surge characteristics of power rectifiers and thyristors in large-area press packagesIEEE Transactions on Electron Devices, 1979
- Accurate calculations of the forward drop and power dissipation in thyristorsIEEE Transactions on Electron Devices, 1978
- Differences between platinum- and gold-doped silicon power devicesIEEE Transactions on Electron Devices, 1976
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhaltenSolid-State Electronics, 1975
- The spectrum and decay of the recombination radiation from strongly excited siliconSolid State Communications, 1972
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Gold as a recombination centre in siliconSolid-State Electronics, 1965