Differences between platinum- and gold-doped silicon power devices
- 1 December 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (12) , 1279-1283
- https://doi.org/10.1109/t-ed.1976.18650
Abstract
Both platinum and gold have been used to reduce lifetimes in fast recovery silicon power devices. There are substantial differences between the energy levels introduced by these impurities. Both impurities introduce acceptor levels which act to reduce hole lifetimes in n-type silicon; however, the gold acceptor is much deeper (Ec- 0.54 eV) than the corresponding platinum acceptor (Ec- 0.26 eV). In p-type material, on the other hand, the two impurities are quite similar; gold introduces a donor at Ev+ 0.35 eV, while the platinum donor is at Ev+ 0.32 eV. In terms of basic physics, this paper establishes guidelines to determine, for a given device type, which lifetime killer should be used to provide optimal performance. Platinum offers improved high-temperature properties and turn-on performance when compared to gold and is a better selection for devices which are switched so rapidly that the turn-off is governed mainly by the high injection lifetime. However, when the switching wave form involves low injection recombination tails, gold is a better choice than platinum.Keywords
This publication has 10 references indexed in Scilit:
- Lifetime-controlling recombination centers in platinum-diffused siliconJournal of Applied Physics, 1976
- Platinum as a lifetime-control deep impurity in siliconJournal of Applied Physics, 1975
- Energy levels and concentrations for platinum in siliconSolid-State Electronics, 1975
- Use of platinum for lifetime control in power devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Electrical properties of silicon doped with platinumSolid-State Electronics, 1970
- THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICONApplied Physics Letters, 1969
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967
- Properties of gold in siliconSolid-State Electronics, 1966
- Spin Resonance of Pd and Pt in SiliconPhysical Review B, 1962