Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs
- 19 April 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
For both n and pMOSFETs, this paper confirms via controlled wafer bending experiments and physical modeling the superiority of uniaxial over biaxial stressed Si and Ge MOSFETs. For uniaxial stressed p-MOSFETs, valence band warping creates favorable in and out-of-plane conductivity effective masses resulting in significantly larger hole mobility enhancement at low strain and high vertical field. For process-induced uniaxial stressed n-MOSFETs, a significant performance advantage results from a smaller threshold voltage shift due to less bandgap narrowing and the gate also being strained.Keywords
This publication has 6 references indexed in Scilit:
- A Logic Nanotechnology Featuring Strained-SiliconIEEE Electron Device Letters, 2004
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thicknessJournal of Applied Physics, 2003
- Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channelsIEEE Transactions on Electron Devices, 2003
- Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistorsJournal of Applied Physics, 2002
- Elementary scattering theory of the Si MOSFETIEEE Electron Device Letters, 1997
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971