Consideration on Mobility Lowering Phenomenon in PolySi Films Using Tunneling Barrier Height Images
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1339-1341
- https://doi.org/10.1143/jjap.29.l1339
Abstract
Polycrystalline silicon films were deposited on SiO2, and arsenic ions were implanted into these films. The Hall and resistivity measurements show that the mobility lowering effect and the activity lowering effect dominate the electrical properties of the films. Tunneling barrier height images also suggest carrier trapping at grain boundaries in lightly doped cases, indicating the possibility of arsenic segregation. These results indicate that the mechanism of the mobility lowering effect is mainly governed by the carrier trapping at grain boundaries.Keywords
This publication has 8 references indexed in Scilit:
- Tunneling barrier height imaging and polycrystalline Si surface observationsJournal of Vacuum Science & Technology A, 1990
- Carrier mobility in polycrystalline semiconductorsApplied Physics Letters, 1981
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980
- Segregation of Arsenic to the Grain Boundaries in Polycrystalline SiliconJournal of the Electrochemical Society, 1980
- Resistivity Lowering Limitations of Heavily Doped Polycrystalline SiliconDenki Kagaku oyobi Kogyo Butsuri Kagaku, 1979
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972
- Statistical Grain Structure Studies: Plane Distribution Curves of Regular PolyhedronsJOM, 1953