The relative contributions of recombination and tunnelling at interface states to the a.c. conductance of metal-insulator-semiconductor diodes
- 31 May 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (5) , 543-548
- https://doi.org/10.1016/0038-1101(87)90210-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCEApplied Physics Letters, 1967
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965
- Impedance of semiconductor-insulator-metal capacitorsSolid-State Electronics, 1964