Contribution of Plasmon and Quasi‐Elastic Scattering to the Kikuchi Structures of Si Measurement and Comparison with the Dynamical Theory

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Abstract
Absolute intensity measurements of the Kikuchi structures in the electron diffraction diagram (75 keV) of a thin Si single crystal have been carried out. The contributions of plasmon and quasielastic scattering have been measured separately by energy analysis. The measured line profiles and band edges are compared with the theory. From the intensity distribution due to plasmon scattering the structure potential V220 and the absorption potentials P000 and P220 could be determined. From the shape of the band edges it can be deduced that the contribution of Umklapp processes to the plasmon scattering is less than 5%. The intensity profile of the quasielastic scattering can mainly be interpreted by phonon scattering.