High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas
- 4 May 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 82 (1-3) , 50-52
- https://doi.org/10.1016/s0921-5107(00)00716-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 ChemistriesJournal of the Electrochemical Society, 1997
- Effect of BCl3 Dry Etching on InAlN Surface PropertiesJournal of the Electrochemical Society, 1996
- Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasmaJournal of Applied Physics, 1995