Thin-film Al/diamond Schottky diode over 400-V breakdown voltage
- 1 December 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5902-5904
- https://doi.org/10.1063/1.346940
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Oriented cubic nucleations and local epitaxy during diamond growth on silicon {100} substratesApplied Physics Letters, 1990
- High temperature Schottky diodes with boron-doped homoepitaxial diamond baseMaterials Research Bulletin, 1990
- Boron doping of diamond thin filmsApplied Physics Letters, 1989
- The barrier height of Schottky diodes with a chemical-vapor-deposited diamond baseJournal of Applied Physics, 1989
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Summary Abstract: Device applications of diamondsJournal of Vacuum Science & Technology A, 1988