Thermal Neutron Damage in Bipolar PNP Transistors
- 1 December 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 24 (6) , 2147-2152
- https://doi.org/10.1109/tns.1977.4329181
Abstract
An experimental test was made of the hypothesis that the source of anomalously large thermal neutron damage in bipolar PNP transistors is silicon bulk displacement caused by recoiling lithium atoms and alpha particles generated in the emitter as a result of the exoergic reaction: {B10(n,α)Li7}. The data provided conclusive proof of this hypothesis, and was consistent with a theoretical equation that was developed to permit the calculation of the relative sensitivity of any given transistor to thermal neutron displacement damage.Keywords
This publication has 2 references indexed in Scilit:
- Comparison of range and range straggling of implanted 10B and 11B in siliconApplied Physics Letters, 1977
- Anomalous Damage Mechanism in PNP Silicon Transistors Due to Thermal NeutronsIEEE Transactions on Nuclear Science, 1973