Comparison of range and range straggling of implanted 10B and 11B in silicon
- 15 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (8) , 399-401
- https://doi.org/10.1063/1.89419
Abstract
In this paper the ranges of implanted boron ions in silicon measured by the 10B (n,α)7Li reaction and by means of Hall‐effect and sheet‐resistivity measurements are compared for 10B and 11B. It is shown that the ranges and the range straggling are identical within the experimental error.Keywords
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