Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 468-472
- https://doi.org/10.1016/0022-0248(91)90504-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD SystemJapanese Journal of Applied Physics, 1989
- Initial stages of GaAs and AlAs growth on Si substrates: Atomic-layer epitaxyJournal of Vacuum Science & Technology B, 1989
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984