Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
- 17 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (7) , 496-498
- https://doi.org/10.1063/1.98378
Abstract
Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode structures from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si. A reduced Schottky barrier height is exhibited by hydrogenated samples, consistent with As depletion of the surface occurring during the long duration plasma processing.This publication has 12 references indexed in Scilit:
- Activation characteristics and defect structure in Si-implanted GaAs-on-SiApplied Physics Letters, 1987
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985
- GaAs MESFET ring oscillator on Si substrateIEEE Transactions on Electron Devices, 1985
- Selective patterning of single-crystal GaAs/Ge structures on Si substrates by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1985
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- Nitridization of gallium arsenide surfaces: Effects on diode leakage currentsApplied Physics Letters, 1984
- Summary Abstract: Are they really Schottky barriers after all?Journal of Vacuum Science and Technology, 1982