Activation characteristics and defect structure in Si-implanted GaAs-on-Si
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1161-1163
- https://doi.org/10.1063/1.97949
Abstract
Undoped metalorganic chemical vapor deposited GaAs layers on Si substrates were implanted with 29Si ions (5×1012 cm−2 dose at 100 keV energy) to form a shallow n-type region. The net donor activation (74%) and electron mobility (3014 cm2 V−1 s−1) after rapid thermal annealing (900 °C, 10 s) were compared to those obtained for similar implants into bulk GaAs. There was a slight improvement in the proton backscattering yield from the GaAs-Si interface region after the annealing cycle, consistent with cross-sectional transmission electron microscopy data showing an alignment of defects in annealed samples.Keywords
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