Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substrates
- 1 March 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (5) , 1751-1753
- https://doi.org/10.1063/1.336439
Abstract
Recombination loss at dislocations is the predominant loss mechanism in thin‐film GaAs solar cells on Si substrates. Cell parameters are calculated based on a simple model in which dislocations act as recombination centers. Excellent agreement is observed between theory and experiment. It is indicated that one could fabricate thin‐film GaAs solar cells with an efficiency of 17–18% on Si substrates if the dislocation density is less than 5×105 cm−2.This publication has 4 references indexed in Scilit:
- Junction current and luminescence near a dislocation or a surfaceJournal of Applied Physics, 1978
- Simplified fabrication of GaAs homojunction solar cells with increased conversion efficienciesApplied Physics Letters, 1978
- Effects of dislocation density on the properties of liquid phase epitaxial GaAsJournal of Applied Physics, 1974
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973