Study of the direct-indirect band-gap transition in GaAs/AlAs short-period superlattices using photocurrent spectroscopy
- 1 May 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (9) , 3501-3504
- https://doi.org/10.1063/1.342621
Abstract
We have unambiguously shown that low-energy optical transitions generate electrons that belong either to the Γ minimum of GaAs or to the X minimum of AlAs, depending on the mean aluminum concentration, for a series of 5-nm period GaAs/AlAs superlattices. We estimate the intensity of the potential responsible for the Γ-X mixing to be on the order of 1–2 meV. For this kind of study, the photocurrent technique, which gives well-structured spectra recorded on large spectral (≂0.7 eV) and temperature (4–300 K) ranges, appears more favorable than the photoluminescence excitation spectroscopy technique.This publication has 7 references indexed in Scilit:
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