Chromium silicide formation under pulsed heat flow
- 1 February 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 136 (1) , 93-104
- https://doi.org/10.1016/0040-6090(86)90112-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Dynamics of the Si-Pt reaction under pulsed heat flowThin Solid Films, 1985
- Suppression of lateral diffusion in the Cr-Si system by ion irradiationApplied Physics Letters, 1984
- A cross-sectional transmission electron microscopy study of silicide growth kinetics in the Cr/(100)Si system at 425 °CJournal of Applied Physics, 1984
- Heat flow transients in Si/Pt systemsThin Solid Films, 1983
- Large-area field emission diode for semiconductor annealingPhysica B+C, 1981
- Metallurgical and electrical properties of chromium silicon interfacesSolid-State Electronics, 1980
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- The crystal growth and thermoelectric properties of chromium disilicideJournal of Materials Science, 1972
- Growth Kinetics Observed in the Formation of Metal Silicides on SiliconApplied Physics Letters, 1972
- The CrSi2-CoSi thermomodule and its applicationsJournal of Materials Science, 1969