Einstein's relationship for hopping electrons
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 214-217
- https://doi.org/10.1016/0022-3093(95)00685-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fieldsPhilosophical Magazine Part B, 1993
- Electronic transport and recombination in amorphous semiconductors at low temperaturesPhysical Review Letters, 1989
- Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating techniquePhysical Review B, 1988
- Electronic structure and transport in covalent amorphous semiconducting alloysJournal of Non-Crystalline Solids, 1970