The Role of Boundary Conditions in Near- and Submicrometer-Length Gallium Arsenide Structures* *This study was supported by ONR and DARPA.
- 1 January 1985
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Thermionic-field emission from interface states at grain boundaries in siliconJournal of Applied Physics, 1984
- Dipoles, defects and interfacesSurface Science, 1983
- The role of boundaries on high speed compound semiconductor devicesSurface Science, 1983
- Diffusion effects and "Ballistic transport"IEEE Transactions on Electron Devices, 1981
- Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillatorsIEEE Transactions on Electron Devices, 1978
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972
- The Influence of Boundary Conditions on Current Instabilities in GaAsIBM Journal of Research and Development, 1969
- The Gunn effect under imperfect cathode boundary conditionsIEEE Transactions on Electron Devices, 1968