Integration of high-Q GaAs varactor diodes and 0.25 mu m GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 38 (9) , 1183-1190
- https://doi.org/10.1109/22.58641
Abstract
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This publication has 1 reference indexed in Scilit:
- A 35 GHz monolithic MESFET LNAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003