Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermodynamic analysis of the MOVPE growth of In Ga1−NJournal of Crystal Growth, 1997
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H-SiC substratesJournal of Applied Physics, 1994
- On the thermal decomposition of GaN in vacuumPhysica Status Solidi (a), 1974
- Few Characteristics of Epitaxial GaN—Etching and Thermal DecompositionJournal of the Electrochemical Society, 1974