Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
- 1 July 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (7A) , L1046
- https://doi.org/10.1143/jjap.29.l1046
Abstract
The surface morphology of MBE-grown Be-doped GaAs was studied by RHEED, SEM and TEM. {411}A facets were found on the (100) surface for Be 6×1019 cm-3 doping at a growth temperature of 630°C. The surface roughness due to this faceting was suppressed by misorienting the GaAs substrate from (100) toward (111)A; a 19.5° misorientation, i.e., a (411)A substrate, was found to be effective in realizing a smooth surface, even for Be 1×1020 cm-3 doping.Keywords
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