Comment on ‘‘Heterojunction valence-band-discontinuity dependence on face orientation’’
- 15 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (9) , 4801-4802
- https://doi.org/10.1103/physrevb.37.4801
Abstract
In a recent Rapid Communication [Phys. Rev. B 35, 6468 (1987)], Muñoz, Sánchez-Dehesa, and Flores presented a self-consistent tight-binding analysis of valence-band offsets in GaAs/AlAs and CdTe/HgTe, and found a sizable dependence upon interface orientation for the latter system. This result differs from that obtained by the present authors for CdTe/HgTe heterojunctions. A more general study, building upon our previous heterojunction calculations, indicates in fact that independence of interface orientation is a general characteristic of a wide class of nonpolar interfaces.Keywords
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