Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat-treated oxygen-containing silicon
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5453-5455
- https://doi.org/10.1063/1.332728
Abstract
A kinetic study of thermal donor formation in 450 °C heat-treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat-treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.This publication has 5 references indexed in Scilit:
- Oxygen diffusion and thermal donor formation in siliconApplied Physics A, 1982
- Influence of oxygen on silicon resistivityJournal of Applied Physics, 1980
- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconPhysica Status Solidi (a), 1979
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958