Amplification of surface shear-wave mode in GaAs
- 1 September 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (9) , 3619-3622
- https://doi.org/10.1063/1.1661777
Abstract
The amplification characteristics of a surface shear wave mode in GaAs has been investigated and shown to be closely approximated by the bulk wave theory, where trapping effects are included. At a frequency of 205 MHz, relative electronic gains from 35–50 dB/cm have been observed.This publication has 11 references indexed in Scilit:
- BLEUSTEIN-GULYAEV SURFACE WAVE AMPLIFICATION IN CdSApplied Physics Letters, 1971
- Uncoupled Piezoelectric Surface-Wave ModesIEEE Transactions on Sonics and Ultrasonics, 1971
- Propagation of Piezoelectric Surface Waves on Cubic and Hexagonal CrystalsJournal of Applied Physics, 1970
- PIEZOELECTRIC SURFACE WAVES IN CUBIC AND ORTHORHOMBIC CRYSTALSApplied Physics Letters, 1970
- A NEW SURFACE WAVE IN PIEZOELECTRIC MATERIALSApplied Physics Letters, 1968
- The Electroacoustic Gain Interaction in III-V Compounds: Gallium ArsenideIEEE Transactions on Sonics and Ultrasonics, 1966
- The Influence of Trapping on the Acousto-Electric Effect in CdSIEEE Transactions on Sonics and Ultrasonics, 1966
- Effect of Traps on Acoustoelectric Current Saturation in CdSPhysical Review B, 1965
- Effect of Trapping of Free Carriers in CdS Ultrasonic AmplifierJournal of the Physics Society Japan, 1964
- Elastic Wave Propagation in Piezoelectric SemiconductorsJournal of Applied Physics, 1962