Cluster formation during annealing of ultra-low-energy boron-implanted silicon
- 1 January 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (1) , 435-439
- https://doi.org/10.1116/1.591207
Abstract
The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1×1015 and 5×1015 cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.Keywords
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