Cluster model approach for electronic structure of Si and Ge(111) and GaAs(110) surfaces
- 2 April 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 72 (4) , 589-616
- https://doi.org/10.1016/0039-6028(78)90349-7
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
- On interpretation of intrinsic surface states on Si(111) surfacePhysics Letters A, 1977
- Commentary on the Effect of Relaxation on the Electronic-Energy-Level Structure of the Si(111) SurfacePhysical Review Letters, 1976
- Comment on the Relation of Relaxation to Electronic-Energy-Level Structure on the Si(111) SurfacePhysical Review Letters, 1976
- Cluster model electronic structure calculations for the ideal and hydrogen chemisorbed Si (100) surfacesSolid State Communications, 1976
- Electronic structure of the (111) surface of semiconductorsPhysical Review B, 1975
- Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structuresPhysical Review B, 1975
- Effect of Relaxation and Reconstruction on the Electronic-Energy-Level Structure of the Si(111) SurfacePhysical Review Letters, 1975
- Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in DiamondPhysical Review B, 1973
- Semi-empirical LCAO band structuresChemical Physics Letters, 1971
- A molecular orbital approach to chemisorptionSurface Science, 1971