Effect of Relaxation and Reconstruction on the Electronic-Energy-Level Structure of the Si(111) Surface
- 26 May 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (21) , 1337-1340
- https://doi.org/10.1103/physrevlett.34.1337
Abstract
Intrinsic surface electronic energy states for the ideal (1 × 1), relaxed (1 × 1), and reconstructed (2 × 1) Si(111) surfaces have been successfully calculated by use of the self-consistent scattered-wave cluster model. For both ideal and relaxed structures, we find three bands of surface states. For (2 × 1) reconstruction our dangling-bond surface band splits into two overlapping bands. Our results account for all the observed features in photoemission experiments on Si(111) surfaces.This publication has 23 references indexed in Scilit:
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