Gas source homoepitaxy on Si(113) – the interrelation of H-induced reconstructions and growth morphology
- 20 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 401 (1) , L375-L382
- https://doi.org/10.1016/s0039-6028(98)00071-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The Influence of Hydrogen on CVD-Growth on Si(111) SurfacesPhysica Status Solidi (a), 1997
- Reconstructions on the Si(113) surfacePhysical Review B, 1996
- The reconstruction of the Si(113) surface studied by scanning tunneling microscopeVacuum, 1995
- Attractive step-step interactions, tricriticality, and faceting in the orientational phase diagram of silicon surfaces between [113] and [114]Physical Review B, 1995
- Atomic Structure of Clean Si(113) Surfaces: Theory and ExperimentPhysical Review Letters, 1994
- ATOMIC STRUCTURE OF Si(113) 3×1-H BY DYNAMICAL LOW-ENERGY ELECTRON DIFFRACTION INTENSITY SPECTRA ANALYSISSurface Review and Letters, 1994
- Chemisorption of H, H2O and C2H4 on Si(113): implications for the structureSurface Science, 1993
- Structure and electronic properties of the Si(113) surfaceSurface Science, 1991
- Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STMSurface Science, 1991
- Structure of Si(113) determined by scanning tunneling microscopyPhysical Review Letters, 1991