Ebic contrast of defects in cadmium telluride. II. Theory
- 1 May 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 55 (5) , 585-598
- https://doi.org/10.1080/13642818708218346
Abstract
A phenomenological model of electron-beam-induced contrast (EBIC) of dislocations perpendicular to the surface and of ‘point-like’ defects is developed. It takes into account the contributions of both the space-charge and bulk regions of a Schottky diode perpendicular to the electron beam. The radius ϵ of the cylinder by which the dislocation is represented increases with depth in the space-charge region (SCR) to its bulk value ϵ0. The influence of the parameters on which the EBIC contrast depends is detailed. It is shown that the reduced minority-carrier lifetime at the dislocation can be deduced from the shape of the EBIC curves c =f(E 0) (E o is the accelerating voltage of primary electrons). By comparing the theoretical value of the contrast with experiment, a value of about 50 nm is assigned to ϵ0. A characterization method for electrically active defects in CdTe is suggested.Keywords
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