GaN Switching Devices for High-Frequency, KW Power Conversion
- 8 August 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Large periphery GaN HEMT switches were designed and fabricated using field-plated gates on semi-insulating SiC substrates. The device layout was designed to handle both large currents and support the high bias conditions required for 100V switching. Blocking voltage of >200V was achieved on devices with saturation currents of 0.8A/mm. The switching characteristics of devices with gate periphery of 30-60mm were measured with both resistive and inductive loads, and showed rise- and fall-times of <25ns. Turn-on and turn-off switching losses of 11 muJ were measured at 100V/11A switching in resistive load. Maximum switching currents of 8 and 23A were measured with an inductive load at 60 and 40V, respectively. These results are the first demonstration of high-power (920W), high-speed (<25ns) switching of GaN devices for kW power conversion applicationsKeywords
This publication has 4 references indexed in Scilit:
- AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) StructureIEEE Transactions on Electron Devices, 2005
- High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter ApplicationIEEE Transactions on Electron Devices, 2004
- Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000