AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure
- 22 August 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 52 (9) , 1963-1968
- https://doi.org/10.1109/ted.2005.854265
Abstract
We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establishing a high-quality epitaxial technology on a Si substrate and by significantly reducing the parasitic resistance, a very low specific on-state resistance of 1.9 m/spl Omega//spl middot/cm/sup 2/ is achieved. The breakdown voltage is as high as 350 V, which is attributed to the Si substrate acting as a backside field plate. Because of reduction of the parasitic inductance, very high level of current (2.0 kA/cm/sup 2/) transients, i.e., a turn-on time of 98 ps and a turn-off time of 96 ps, are successfully measured for the first time.Keywords
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