AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation
- 11 June 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (7A) , L831
- https://doi.org/10.1143/jjap.43.l831
Abstract
No abstract availableKeywords
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