A high-power AlGaN/GaN heterojunction field-effect transistor
- 12 December 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (3) , 589-592
- https://doi.org/10.1016/s0038-1101(02)00419-7
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noiseIEEE Transactions on Electron Devices, 2001
- Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 hJapanese Journal of Applied Physics, 1999
- High-Temperature Reliability of GaN Electronic DevicesMRS Proceedings, 1999
- Reliability of metal semiconductor field-effect transistor using GaN at high temperatureJournal of Applied Physics, 1998
- Reliability of GaN Metal Semiconductor Field-Effect Transistor at High TemperatureJapanese Journal of Applied Physics, 1998
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993