12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET
- 22 March 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A recessed-gate structure was introduced to improve transconductance (gm) and gain characteristics in AlGaN/GaN field-plate (FP) FETs. A maximum gm was improved from 130 to 200 mS/mm by introducing gate recess. Recessed FP-FETs exhibited 3-7 dB higher linear gain as compared with planar FP-FETs. A 1 mm-wide recessed FP-FET biased at a drain voltage of 66 V demonstrated 12.0 W output power, 21.2 dB linear gain, and 48.8 % power added efficiency at 2 GHz. To our knowledge, the power density of 12.0 W/mm is the highest ever achieved for GaN-based FETs.Keywords
This publication has 7 references indexed in Scilit:
- An 80W AlGaN/GaN heterojunction FET with a field-modulating platePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 10-W/mm AlGaN-GaN HFET with a field modulating plateIEEE Electron Device Letters, 2003
- Applications of SiC MESFETs and GaN HEMTs in power amplifier designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Wide bandgap semiconductor devices and MMICs for RF power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Bias-dependent performance of high-power AlGaN/GaN HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaN HFET technology for RF applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002