GaN HFET technology for RF applications
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.Keywords
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