Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10 GHz
- 2 March 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (5) , 469-471
- https://doi.org/10.1049/el:20000353
Abstract
A demonstration of the high performance microwave-noise characteristics of robust 0.15 µm gate-length GaN/AlGaN MODFETs is reported. Very low noise figures were achieved through the optimisation of materials growth and device fabrication processes. A minimum noise figure of 0.60 dB at 10 GHz has been achieved with a gate-drain breakdown voltage of 68 V. These excellent combined characteristics clearly demonstrate the potential of GaN MODFETs for robust low-noise amplifiers.Keywords
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