Device characteristics of scaled GaN/AlGaN MODFETs
- 16 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (8) , 811-812
- https://doi.org/10.1049/el:19980576
Abstract
GaN/AlGaN MODFETs with gate-widths varying from 0.2 to 1 mm have been successfully fabricated, and the device characteristics have been systematically investigated. The epitaxial layers were grown directly on sapphire substrates by RF-assisted MBE. Thick-airbridge technology was employed in the fabrication of large gate periphery devices. Very stable and reproducible device characteristics have been obtained for devices with a total gate width of up to 1 mm. These device results demonstrated the excellent potential of GaN-based FETs as power cells for practical microwave applications.Keywords
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