Enhanced optical gain in InGaN–AlGaN quantum wire and quantum dot lasers due to excitonic transitions
- 15 May 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (10) , 7354-7359
- https://doi.org/10.1063/1.372993
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasersApplied Physics Letters, 1998
- Reduced threshold current density due to excitonic optical gain in the presence of dislocations and surface states in tensile strained ZnCdSe quantum wire lasersJournal of Applied Physics, 1997
- Modeling of optical gain in InGaN-AlGaN and In/sub x/Ga/sub 1-x/N-In/sub y/Ga/sub 1-y/N quantum-well lasersIEEE Journal of Quantum Electronics, 1996
- A comparison of lasing mechanisms in ZnSe and GaAsJournal of Crystal Growth, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue–green lasers: Prediction of low threshold under tensile strainApplied Physics Letters, 1995
- Gain and dynamics in ZnSe-based quantum wellsJournal of Crystal Growth, 1994
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Theoretical Gain of Quantum-Well Wire LasersJapanese Journal of Applied Physics, 1985