Investigation of soft upsets in MOS memories with a microbeam
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1) , 437-442
- https://doi.org/10.1016/0029-554x(81)91042-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Soft Upsets in 16K Dynamic RAMs Induced by Single High Energy PhotonsIEEE Transactions on Nuclear Science, 1980
- Cosmic-Ray-Induced Errors in MOS DevicesIEEE Transactions on Nuclear Science, 1980
- Single Event Upsets in RAMs Induced by Protons at 4.2 GeV and Protons and Neutrons below 100 MeVIEEE Transactions on Nuclear Science, 1980
- Effect of Cosmic Rays on Computer MemoriesScience, 1979
- Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliabilityIEEE Transactions on Electron Devices, 1979
- Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer MemoriesIEEE Transactions on Nuclear Science, 1979
- Single Event Upset of Dynamic Rams by Neutrons and ProtonsIEEE Transactions on Nuclear Science, 1979
- Alpha-particle-induced soft errors in dynamic memoriesIEEE Transactions on Electron Devices, 1979
- A miniature electrostatic lens for forming MeV millibeamsNuclear Instruments and Methods, 1978