Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates
- 30 April 1989
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (4) , 983-986
- https://doi.org/10.1016/0022-0248(89)90134-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (63604001)
This publication has 11 references indexed in Scilit:
- Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAsJournal of Crystal Growth, 1988
- The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP SubstratesJapanese Journal of Applied Physics, 1988
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVDJapanese Journal of Applied Physics, 1988
- The heteroepitaxial growth of ZnSe on GaP and GaAs substratesJournal of Applied Physics, 1987
- Low resistivity Al-doped ZnS grown by MOVPEJournal of Crystal Growth, 1986
- VPE Growth of ZnS Incorporating Indium on GaPJapanese Journal of Applied Physics, 1986
- Indium doping effects on vapor-phase growth of ZnS on GaPJournal of Applied Physics, 1986
- Growth of ZnS by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- Epitaxial growth of ZnS on GaP by Zn-S-H2 CVD methodJournal of Crystal Growth, 1981
- The effect of bypass flows on heteroepitaxial growth of ZnS on GaPJournal of Crystal Growth, 1976