Phonon and Plasmon Interactions in Metal-Semiconductor Tunneling Junctions
- 15 September 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 2 (6) , 1875-1887
- https://doi.org/10.1103/physrevb.2.1875
Abstract
Reproducible metal-semiconductor tunnel junctions are made on degenerate semiconductor single crystals whose surfaces have been cleaned by etching and then heating the samples in vacuum. This technique has been successfully used on GaAs, GaSb, and CdS. Detailed tunneling spectra are presented on the above-mentioned semiconductors and also on degenerate Sn. In addition, some of the metal-semiconductor junctions have been intentionally doped with molecular impurities. No identifiable vibrational spectra of the molecules are observed.
Keywords
This publication has 35 references indexed in Scilit:
- Tunneling Spectroscopy of CdS Schottky-Barrier JunctionsPhysical Review B, 1969
- Analysis of the Tunneling Measurement of Electronic Self-Energies Due to Interactions of Electrons and Holes with Optical Phonons in SemiconductorsPhysical Review B, 1969
- Tunneling Measurement of Electron-Plasmon Interaction in Degenerate SemiconductorsPhysical Review B, 1969
- Observations of Surface Plasmon Excitation by Tunneling Electrons in GaAs-Pb Tunnel JunctionsPhysical Review Letters, 1969
- Evidence for Hole-To-Phonon Interaction from Tunneling Measurements in GaAs-Pb JunctionsPhysical Review Letters, 1968
- Molecular Vibration Spectra by Inelastic Electron TunnelingPhysical Review B, 1968
- Tunneling Spectroscopy in GaAsPhysical Review B, 1967
- The Depth of Mechanical Damage in Gallium ArsenideJournal of the Electrochemical Society, 1965
- Etching of Gallium Arsenide with Nitric AcidJournal of the Electrochemical Society, 1964
- Characteristics of the {111}Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1961