Far-infra-red investigations of impurity bands in semiconductors

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Abstract
For a study of the mobile-electron band lying between the conduction band and the impurity ground states in heavily doped germanium, the techniques of far-infra-red absorption and photoconductivity have been employed. The spectra are closely related to the thermal activation energy ε2 determined by d.c. resistivity measurements. An experiment on the temperature dependence of the far-infrared absorption spectra in germanium gives reliable evidence of the existence of localized states below the mobility edge of the upper Hubbard band. Comparisons of the impurity bands between germanium and silicon have also been made.

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