Far-Infrared Photoconductivity in Gallium Arsenide
- 1 January 1977
- journal article
- research article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 42 (1) , 128-136
- https://doi.org/10.1143/jpsj.42.128
Abstract
The temperature and impurity concentration dependences of the far-infrared photoconductivity in GaAs crystals have been studied. The small ionization energy of the 2 p excited state experimentally estimated is well explained by use of the “cascade capture theory”. The effect of the increase of the impurity concentration on the photoconductive response is ascribed to the decrease of the ability of the electron-transfer of the high excited states. The impurity conduction through the “excited state band” is also discussed.Keywords
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