Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002