Oxide trapping under spatially variable oxide electric field in the metal-oxide-silicon structure
- 10 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (6) , 463-465
- https://doi.org/10.1063/1.98423
Abstract
An improved trapping-detrapping model is presented describing the effect of electron injection into the oxide of metal-oxide-silicon devices. The model covers both hot-electron and tunneling injection. It takes into account the spatial variation of the oxide electric field due to the trapped charge as well as the effect of this variation on the trapping-detrapping processes. The calculated results agree well with previously reported experimental results such as the field-dependent steady-state flatband voltage and the trapped charge centroid.Keywords
This publication has 7 references indexed in Scilit:
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986
- Dynamic model of trapping-detrapping in SiO2Journal of Applied Physics, 1985
- High-field and current-induced positive charge in thermal SiO2 layersJournal of Applied Physics, 1985
- Investigation of the SiO2-induced substrate current in silicon field-effect transistorsJournal of Applied Physics, 1985
- The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interfaceJournal of Applied Physics, 1984
- High field current induced-positive charge transients in SiO2Journal of Applied Physics, 1983
- Current runaway in insulators affected by impact ionization and recombinationJournal of Applied Physics, 1976